RFD14N05LSM9A Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs

RFD14N05L, RFD14N05LSM, RFP14N05L
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DSS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_DM
Pulsed Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E_AS
Power Dissipation . . .
Derate above 25^oC
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P_D
..
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . .T_pkg
RFD14N05L, RFD14N05LSM,
RFP14N05L
50
50
±10
14
Refer to Peak Current Curve
Refer to UIS Curve
48
0.32
-55 to 175
300
260
UNITS
V
V
V
A
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 150^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
SYMBOL
TEST CONDITIONS
MIN
BV_DSS I_D = 250µA, V_GS = 0V, Figure 13
50
V_GS(TH) V_GS = V_DS, I_D = 250µA, Figure12
1
I_DSS V_DS = 40V, V_GS = 0V
-
V_DS = 40V, V_GS = 0V, T_C = 150^oC
-
I_GSS V_GS = ±10V
-
r_DS(ON) I_D = 14A, V_GS = 5V, Figures 9, 11
-
t_(ON) V_DD = 25V, I_D = 7A,
-
t_d(ON)
R_L = 3.57Ω, V_GS = 5V,
R_GS = 0.6Ω
-
t_r
-
t_d(OFF)
-
t_f
-
t_(OFF)
-
Q_g(TOT)
Q_g(5)
Q_g(TH)
V_GS = 0V to 10V
V_GS = 0V to 5V
V_GS = 0V to 1V
V_DD = 40V, I_D = 14A, -
R_L = 2.86Ω
-
Figures 20, 21
-
C_ISS V_DS = 25V, V_GS = 0V, f = 1MHz
-
C_OSS ^{Figure 14}
-
C_RSS
-
R_θJC
-
R_θJA TO-251 and TO-252
-
R_θJA TO-220
-
Source to Drain Diode Specifications
TYP
-
-
-
-
-
-
-
13
24
42
16
-
-
-
-
670
185
50
-
-
-
MAX
-
2
1
50
±100
0.100
60
-
-
-
-
100
40
25
1.5
-
-
-
3.125
100
80
UNITS
V
V
µA
µA
nA
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
o_C/W
o_C/W
o_C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP MAX UNITS
Source to Drain Diode Voltage (Note 2)
V_SD I_SD = 14A
-
-
1.5
V
Diode Reverse Recovery Time
t_rr
I_SD = 14A, dI_SD/dt = 100A/µs
-
-
125
ns
NOTES:
2. Pulse Test: Pulse Width ≤300ms, Duty Cycle ≤2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature. See Transient Thermal Impedance Curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
©2004 Fairchild Semiconductor Corporation
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B1