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RFD14N05LSM9A Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 14A, 50V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs
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RFD14N05L, RFD14N05LSM, RFP14N05L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
16
12
8
4
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
2
1
0.5
0.2
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
TC = 25oC
TJ = MAX. RATED
100µs
10
1ms
1
0.5
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
10ms
100ms
DC
100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
©2004 Fairchild Semiconductor Corporation
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
100
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25 175 - TC
150
VGS = 5V
10 TC = 25oC
VGS = 10V
10-5
10-4
10-3
10-2
10-1
100
101
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
RFD14N05L, RFD14N05LSM, RFP14N05L Rev. B1
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