RFD10P03L Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

RFD10P03L, RFD10P03LSM, RFP10P03L
Typical Performance Curves Unless Otherwise Specified (Continued)
-50
STARTING T_J = 25^oC
-25
PULSE DURATION = 250µs,
T_C = 25^oC
-20
V_GS = -5V
-10
STARTING T_J = 150^oC
V_GS = -10V
-15
V_GS = -4V
If R = 0
t_AV = (L) (I_AS)/(1.3 RATED BV_DSS - V_DD)
IF R ≠ 0
t_AV = (L/R) ln [(I_AS*R)/(1.3 RATED BV_DSS - V_DD) + 1]
-1
0.01
0.1
1
10
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Application Notes AN9321 and AN9322.
FIGURE 6. UNCLAMPED INDUCTIVE SWITCHING
CAPABILITY
-10
V_GS =-3.5V
-5
V_GS = -3V
0
0
-1.0
-2.0
-3.0
-4.0
-5.0
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 7. SATURATION CHARACTERISTICS
-25
400
PULSE TEST
PULSE DURATION = 250µs
-55^oC
25^oC
-20 ^{DUTY CYCLE = 0.5% MAX}
V_DD = -15V
175^oC
300
-15
200
-10
100
-5
I_D = -20A
I_D = -10A
I_D = -5A
I_D = -2.5A
T_C = 25^oC
0
0
-1.5
-3.0
-4.5
-6.0
V_GS, GATE TO SOURCE VOLTAGE (V)
0
-2.0
-4.0
-6.0
-8.0
V_GS, GATE TO SOURCE VOLTAGE (V)
-10.0
FIGURE 8. TRANSFER CHARACTERISTICS
FIGURE 9. DRAIN TO SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT
2.0
V_GS = -5V, I_D = -10.0A
1.5
1.2
I_D =- 250uA
1.1
1.0
1.0
0.5
0.9
0.0
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE ON
RESISTANCE vs JUNCTION TEMPERATURE
0.8
-80
-40
0
40
80 120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
4