RFD10P03L Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

RFD10P03L, RFD10P03LSM, RFP10P03L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100 125 150 175
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs
CASE TEMPERATURE
-12
-10
-8
-6
-4
-2
0
25
50
75
100
125
150
175
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2.0
1.0
0.5
0.2
0.1 ^0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10^-5
10^-4
P_DM
10^-3
10^-2
10^-1
t, RECTANGULAR PULSE DURATION (s)
t₁
t₂
NOTES: DUTY FACTOR: D = t₁/t₂
PEAK T_J = P_DM x Z_θJC x R_θJC+ T_C
10⁰
10¹
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-100
T_J
T_C
=
=
MAX RATED
25^oC
100µs
-10
1ms
OPERATION IN THIS
AREA MAY BE
10ms
100ms
LIMITED BY r_{DS(ON) VDSS MAX = -30V}
DC
-1
-1
-10
V_DS, DRAIN TO SOURCE VOLTAGE (V)
-100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-100
V_GS = -10V
V_GS = -5V
T_C = 25^oC
FOR TEMPERATURES ABOVE 25^oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:

I
=
I25


1----7---5-1---5-–_{--0--T----C---}
TRANSCONDUCTANCE
MAY LIMIT CURRENT
-10
IN THIS REGION
-5
10^-5
10^-4
10^-3
10^-2
10^-1
t, PULSE WIDTH (s)
10⁰
10¹
FIGURE 5. PEAK CURRENT CAPABILITY
3