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RFD10P03L Datasheet, PDF (2/12 Pages) Fairchild Semiconductor – 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET
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RFD10P03L, RFD10P03LSM, RFP10P03L
Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified
RFD10P03L, RFD10P03LSM,
RFP10P03L
UNITS
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20KΩ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM
Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .EAS
Power Dissipation . . . .
Derate Above 25oC.
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.PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
(0.063in (1.6mm) from case for 10s)
-30
-30
±10
10
See Figure 5
Refer to UIS Curve
65
0.43
-55 to 175
300
V
V
V
A
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
BVDSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-5)
Qg(TH)
CISS
COSS
CRSS
RθJC
RθJA
ID = 250µA, VGS = 0V
VGS = VDS, ID = 250µA
VDS = -30V,
TC = 25oC
VGS = 0V
TC = 150oC
VGS = ±10V
ID = 10A, VGS = -5V
ID = 10A, VGS = -4.5V
VDD = 15V, ID ≅ 10A
RL = 1.5Ω, RGS = 5Ω,
VGS = -5V
VGS = 0 to -10V
VGS = 0 to -5V
VGS = 0 to -1V
VDD = -24V,
ID ≅ 10A,
RL = 2.4Ω
VDS = -25V, VGS = 0V
f = 1MHz
RFD10P03L, RFD10P03LSM
RFP10P03L
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Forward Voltage
VSD
ISD = -10A
Reverse Recovery Time
trr
ISD = -10A, dISD/dt = -100A/µs
NOTE:
1. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.
MIN
TYP MAX UNITS
-30
-
-
V
-1
-
-2
V
-
-
-1
µA
-
-
-50
µA
-
-
±100
nA
-
-
0.200
Ω
0.220
Ω
-
-
100
ns
-
15
-
ns
-
50
-
ns
-
35
-
ns
-
20
-
ns
-
-
80
ns
-
25
30
nC
-
13
16
nC
-
1.2
1.5
nC
-
1035
-
pF
-
340
-
pF
-
35
-
pF
-
-
2.30
oC/W
-
-
100
oC/W
80
oC/W
MIN
TYP
MAX UNITS
-
-
-1.5
V
-
-
75
ns
2
 ▷