RFD10P03L Datasheet, PDF (1/12 Pages) Fairchild Semiconductor – 10A, 30V, 0.200W, Logic Level P-Channel Power MOSFET

SEMICONDUCTOR
May 1997
RFD10P03L, RFD10P03LSM,
RFP10P03L
10A, 30V, 0.200Ω, Logic Level
P-Channel Power MOSFET
Features
Description
• 10A, 30V
• r_DS(ON) = 0.200Ω
• Temperature Compensating PSPICE Model
• PSPICE Thermal Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175^oC Operating Temperature
Ordering Information
These products are P-Channel power MOSFETs manufac-
tured using the MegaFET process. This process, which uses
feature sizes approaching those of LSI circuits, gives opti-
mum utilization of silicon, resulting in outstanding perfor-
mance. They were designed for use in applications such as
switching regulators, switching converters, motor drivers,
and relay drivers. These transistors can be operated directly
from integrated circuits.
Symbol
PART NUMBER
PACKAGE
BRAND
D
RFD10P03L
TO-251AA
10P03L
RFD10P03LSM
TO-252AA
10P03L
G
RFP10P03L
TO-220AB
F10P03L
S
NOTE: When ordering, use the entire part number. Add the suffix, 9A,
to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..
Formerly developmental type TA49205.
Packaging
JEDEC TO-220AB
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-251AA
DRAIN (FLANGE)
SOURCE
DRAIN
GATE
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1997
1
File Number 3515.1