MMBT2222A Datasheet, PDF (4/5 Pages) NXP Semiconductors – NPN switching transistor

Typical Performance Characteristics
Turn On and Turn Off Times
vs Collector Current
400
I_B1= I_B2=
I_c
10
320
V _cc = 25 V
240
160
80
0
10
t _off
t _on
100
I _CI_C - COLLECTOR CURRENT (mA)
1000
Figure 7. Turn On and Turn Off Times
vs Collector Current
Power Dissipation vs
Ambient Temperature
1
0.75 _TO-92
SOT-223
0.5
SOT-23
0.25
0
0
25
50
75
100 125 150
TEMPERATURE (^oC)
Figure 9. Power Dissipation vs
Ambient Temperature
Common Emitter Characteristics
2.4
V_CE = 10 V
2 ^{I C = 10 mA}
h re
h ie
1.6
h fe
1.2
hoe
0.8
0.4
0
0
20
40
60
80
100
T _A - AMBIENT TEMPERATURE (^o C)
Figure 11. Common Emitter Characteristics
(Continued)
Switching Times
vs Collector Current
400
I_B1= I_B2=
I_c
10
320
V _cc = 25 V
240
160
80
0
10
ts
tr
tf
td
100
I _CI_C - COLLECTOR CURRENT (mA)
1000
Figure 8. Switching Times vs Collector Current
Common Emitter Characteristics
8
V_CE = 10 V
T _A = 25^oC
6
h oe
4
h re
2
h fe
h ie
0
0
10
20
30
40
50
60
I _C - COLLECTOR CURRENT (mA)
Figure 10. Common Emitter Characteristics
Common Emitter Characteristics
1.3
1.25
1.2
I _C = 10 mA
T _A = 25^oC
h fe
1.15
1.1
h _ie
1.05
1
0.95
h re
0.9
0.85
0.8
h oe
0.75
0
5 10 15 20 25 30 35
V_CE - COLLECTOR VOLTAGE (V)
Figure 12. Common Emitter Characteristics
© 2010 Fairchild Semiconductor Corporation
PN2222A / MMBT2222A / PZT2222A Rev. A3
4
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