MMBT2222A Datasheet, PDF (3/5 Pages) NXP Semiconductors – NPN switching transistor

Typical Performance Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V _CE = 5V
400
125 °C
300
200
25 °C
100
- 40 °C
0
0.1 0.3
1
3
10 30 100 300
I _C - COLLECTOR CURRENT (mA)
Figure 1. Typical Pulsed Current Gain
vs Collector Current
Base-Emitter Saturation
Voltage vs Collector Current
1
β = 10
- 40 °캜C
0.8
25°캜C
125°캜C
0.6
0.4
1
10
100
500
I I_CC - COLLECTOR CURRENT (m A)
Figure 3. Base-Emitter Saturation Voltage
vs Collector Current
Collector-Cutoff Current
vs Ambient Temperature
500
100
V = 40V
CB
10
1
0.1
25
50
75
100
125
150
T_A - AMBIENT TEMPERATURE (°C)
Figure 5. Collector Cutoff Current
vs Ambient Temperature
Collector-Emitter Saturation
Voltage vs Collector Current
0.4
β = 10
0.3
0.2
125°캜C
25 °캜C
0.1
- 40°캜C
1
10
100
500
I _C - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage
vs Collector Current
Base-Emitter ON Voltage vs
Collector Current
1
V_CE = 5V
0.8
- 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1
10
25
II_CC - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage
vs Collector Current
Emitter Transition and Output
Capacitance vs Reverse Bias Voltage
20
f = 1 MHz
16
12
C _te
8
C _ob
4
0.1
1
10
100
REVERSE BIAS VOLTAGE (V)
Figure 6. Emitter Transition and Output Capacitance
vs Reverse Bias Voltage
© 2010 Fairchild Semiconductor Corporation
PN2222A / MMBT2222A / PZT2222A Rev. A3
3
www.fairchildsemi.com