MMBT2222A Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN switching transistor

Electrical Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BV_(BR)CEO Collector-Emitter Breakdown Voltage * I_C = 10mA, I_B = 0
BV_(BR)CBO Collector-Base Breakdown Voltage I_C = 10μA, I_E = 0
BV_(BR)EBO Emitter-Base Breakdown Voltage
I_E = 10μA, I_C = 0
I_CEX Collector Cutoff Current
V_CE = 60V, V_EB(off) = 3.0V
I_CBO Collector Cutoff Current
V_CB = 60V, I_E = 0
V_CB = 60V, I_E = 0, T_a = 125°C
I_EBO Emitter Cutoff Current
V_EB = 3.0V, I_C = 0
I_BL
Base Cutoff Current
V_CE = 60V, V_EB(off) = 3.0V
On Characteristics
h_FE
DC Current Gain
V_CE(sat) Collector-Emitter Saturation Voltage *
V_BE(sat) Base-Emitter Saturation Voltage *
Small Signal Characteristics
I_C = 0.1mA, V_CE = 10V
I_C = 1.0mA, V_CE = 10V
I_C = 10mA, V_CE = 10V
I_C = 10mA, V_CE = 10V, T_a = -55°C
I_C = 150mA, V_CE = 10V *
I_C = 150mA, V_CE = 1V *
I_C = 500mA, V_CE = 10V *
I_C = 150mA, I_B = 15mA
I_C = 500mA, I_B = 50mA
I_C = 150mA, I_B = 15mA
I_C = 500mA, I_B = 50mA
f_T
C_obo
C_ibo
rb’C_c
NF
Current Gain Bandwidth Product
Output Capacitance
Input Capacitance
Collector Base Time Constant
Noise Figure
Re(h_ie) Real Part of Common-Emitter
High Frequency Input Impedance
I_C = 20mA, V_CE = 20V, f = 100MHz
V_CB = 10V, I_E = 0, f = 1MHz
V_EB = 0.5V, I_C = 0, f = 1MHz
I_C = 20mA, V_CB = 20V, f = 31.8MHz
I_C = 100μA, V_CE = 10V,
R_S = 1.0KΩ, f = 1.0KHz
I_C = 20mA, V_CE = 20V, f = 300MHz
Switching Characteristics
t_d
Delay Time
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
V_CC = 30V, V_EB(off) = 0.5V,
I_C = 150mA, I_B1 = 15mA
V_CC = 30V, I_C = 150mA,
I_B1 = I_B2 = 15mA
* Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%
Min.
40
75
6.0
35
50
75
35
100
50
40
0.6
300
Max. Units
V
V
V
10
nA
0.01 μA
10
μA
10
nA
20
nA
300
0.3
V
1.0
V
1.2
V
2.0
V
MHz
8.0
pF
25
pF
150 pS
4.0
dB
60
Ω
10
ns
25
ns
225
ns
60
ns
© 2010 Fairchild Semiconductor Corporation
PN2222A / MMBT2222A / PZT2222A Rev. A3
2
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