MMBT2222A Datasheet, PDF (1/5 Pages) NXP Semiconductors – NPN switching transistor

PN2222A / MMBT2222A / PZT2222A
NPN General Purpose Amplifier
August 2010
Features
• This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.
• Sourced from process 19.
PN2222A
MMBT2222A
PZT2222A
EBC
TO-92
C
SOT-23
Mark:1P
E
B
C
SOT-223
E
C
B
Absolute Maximum Ratings * T_a = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
V_CEO
Collector-Emitter Voltage
40
V
V_CBO
Collector-Base Voltage
75
V
V_EBO
Emitter-Base Voltage
6.0
V
I_C
Collector Current
1.0
A
T_STG
Operating and Storage Junction Temperature Range
- 55 ~ 150
°C
* This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These rating are based on a maximum junction temperature of 150 degrees C.
2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics T_a = 25°C unless otherwise noted
Symbol
Parameter
PN2222A
Max.
*MMBT2222A **PZT2222A
P_D
Total Device Dissipation
Derate above 25°C
625
350
1,000
5.0
2.8
8.0
R_θJC
Thermal Resistance, Junction to Case
83.3
R_θJA
Thermal Resistance, Junction to Ambient
200
357
125
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06”.
** Device mounted on FR-4 PCB 36mm × 18mm × 1.5mm; mounting pad for the collector lead min. 6cm².
Units
mW
mW/°C
°C/W
°C/W
© 2010 Fairchild Semiconductor Corporation
PN2222A / MMBT2222A / PZT2222A Rev. A3
1
www.fairchildsemi.com