FR014H5JZ Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – High-Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Positive Bias Characteristics
R_ON
Device Resistance, Switch On
V_ON
∆VON / ∆TJ
Input Voltage, VIN, at which Voltage
at POS, V_POS, Reaches a Certain
Level at Given Current
Temperature Coefficient of VON
V_F
Diode Forward Voltage
IBIAS
Bias Current Flowing into POS Pin
during Normal Bias Operation
Negative Bias Characteristics
V- MAX_OP
∆V- _{MAX_OP} /
∆T_J
Reverse Bias Breakdown Voltage
Reverse Bias Breakdown Voltage
Temperature Coefficient
I-
Leakage Current from NEG to POS
in Reverse-Bias Condition
t_RN
Time to Respond to Negative Bias
Condition
Integrated TVS Performance
VZ
Breakdown Voltage @ IT
IR
Leakage Current from NEG to CTL
Max Pulse
IPPM
Current from
NEG to CTL
IEC61000-4-5
Clamping
8x20µs pulse
V_C
Voltage form
NEG to CTL at
I_PPM
Dynamic Characteristics
C_I
Input Capacitance between POS
and CTL
C_S
Switch Capacitance between POS
and NEG
CO
Output Capacitance between NEG
and CTL
RC
Control Internal Resistance
Conditions
VIN = +4V, IIN = 1.5A
V_IN = +5V, I_IN = 1.5A
V_IN = +5V, I_IN = 1.5A,
TJ = 125°C
VIN = +12V, IIN = 1.5A
I_IN = 100mA, V_POS - V_NEG =
50mV, V_CTL = 0V
VCTL = VNEG, IDIODE = 0.1A,
Pulse width < 300µs
V_POS = 5V, V_CTL = 0V,
No Load
I_IN = -250µA, V_CTL = V_NEG =0V
VPOS = -20V,
VCTL = VNEG = 0V
V_CTL = 5V, V_POS = 0V, C_LOAD =
10µF, Reverse Bias Startup
Inrush Current = 0.2A
IT = 1mA, 300µs Pulse
V_NEG = +25V, V_CTL = 0V
V_NEG = -25V, V_CTL = 0V
VNEG > VCTL
V_NEG < V_CTL
V_NEG > V_CTL
VNEG < VCTL
VIN = -5V, VCTL = VNEG = 0V, f
= 1MHz
Min.
2.0
0.57
28.5
Typ.
18
14
20
11
2.4
-3.52
0.63
30
22.5
1
30
1.5
-1.5
34
-34
2440
564
2526
3.6
Max. Unit
23
19
mΩ
14
3.0
V
mV/°C
0.70 V
nA
-30
V
mV/°C
µA
50
ns
31.2 V
10
µA
-10
0.8
A
-0.9
V
pF
Ω
© 2012 Fairchild Semiconductor Corporation
FR014H5JZ • Rev. C1
4
www.fairchildsemi.com