FR014H5JZ Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – High-Side Reverse Bias / Reverse Polarity Protector With Integrated Over Voltage Transient Suppression

Absolute Maximum Ratings
Values are at TA=25°C unless otherwise noted.
Symbol
Parameter
Values
Unit
V+ _{MAX_OP}
Steady-State Normal Operating Voltage between POS and CTL Pins
(VIN = V+ MAX_OP, IIN = 1.5A, Switch On)
+25
V+ 24
24-Hour Normal Operating Voltage Withstand Capability between POS
and CTL Pins (V_IN = V+ ₂₄, I_IN = 1.5A, Switch On) ⁽¹⁾
+32
V
V- _{MAX_OP}
Steady-State Reverse Bias Standoff Voltage between POS and CTL Pins
(VIN = V- MAX_OP)
-30
IIN
Input Current
Continuous⁽²⁾ (see Figure 4)
9
A
T_J
Operating Junction Temperature
150
°C
PD
IDIODE_CONT
IDIODE_PULSE
Power Dissipation
T_C = 25°C
T_A = 25°C⁽²⁾ (see Figure 4)
Steady-State Diode Continuous Forward Current from POS to NEG⁽²⁾
(see Figure 4)
Pulsed Diode Forward Current from POS to NEG (300µs Pulse) ⁽²⁾ (see
Figure 5)
36
W
2.3
2
A
450
Human Body Model, JESD22-A114
8
ESD
Charged Device Model, JESD22-C101
Electrostatic
Discharge
Capability System Model,
IEC61000-4-2
NEG is shorted to CTL
and connected to GND
No external connection
between NEG and CTL
Contact
Air
Contact
Air
2
8
15
kV
3
4
Notes:
1. The V₊₂₄ rating is NOT a survival guarantee. It is a statistically calculated survivability reference point taken on
qualification devices, where the predicted failure rate is less than 0.01% at the specified voltage for 24 hours. It is
intended to indicate the device’s ability to withstand transient events that exceed the recommended operating
voltage rating. Specification is based on qualification devices tested using accelerated destructive testing at
higher voltages, as well as production pulse testing at the V₊₂₄ level. Production device field life results may vary.
Results are also subject to variation based on implementation, environmental considerations, and circuit
dynamics. Systems should never be designed with the intent to normally operate at V+24 levels. Contact Fairchild
Semiconductor for additional information.
2. The device power dissipation and thermal resistance (R_θ) are characterized with device mounted on the following
FR4 printed circuit boards, as shown in Figure 4 and Figure 5
Figure 4. 1 Square Inch of 2-ounce copper
Figure 5. Minimum Pads of 2-ounce Copper
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient⁽²⁾ (see Figure 4)
© 2012 Fairchild Semiconductor Corporation
FR014H5JZ • Rev. C1
3
Value
3.4
50
Unit
°C/W
www.fairchildsemi.com