FQU13N06LTU Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

 !   



  
1.2
1.1
1.0
0.9
※ Notes :
1.
2.
V_GS
I_D =
=0V
250 μ
A
0.8
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Operation in This Area
10²
is Limited by R_DS(on)
100 µs
10¹
1 ms
10 ms
DC
10⁰
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-1
10^-1
10⁰
10¹
10²
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
※ Notes :
1. V_GS = 10 V
2. I_D = 5.5 A
0.0
-100
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
12
10
8
6
4
2
0
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
D =0 .5
10⁰
1 0 ^-1
0 .2
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
※ Notes :
1 . Z _{θ J C}( t ) = 4 . 5 ℃ /W M a x .
2 . D u t y Fa c t o r , D = t ₁/t ₂
3 . T _{J M} - T _C = P _{D M} * Z _{θ J C}( t )
P_DM
t₁
t₂
1 0 ^-5
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
t₁, R e c t a n g u l a r P u l s e D u r a t i o n [ s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
4
FQD13N06L / FQU13N06L Rev. C3
www.fairchildsemi.com