FQU13N06LTU Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

 !   
Top : 10.V0^GV^S
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
10¹
3.5 V
Bottom : 3.0 V
10⁰
※ Notes :
1. 250μ s Pulse Test
2. T_C = 25℃
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
300
200
V_GS = 5V
V_GS = 10V
100
※ Note : T_J = 25℃
0
0
10
20
30
40
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
800
600
C_oss
C_iss
400
200
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V_GS = 0 V
2. f = 1 MHz
0
10^-1
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10¹
10⁰
150℃
25℃
10^-1
0
-55℃
※ Notes :
1.
2.
2V5^DS0μ^=s25PVulse
Test
2
4
6
8
10
V_GS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
10⁰
10^-1
0.2
150℃
25℃
※ Notes :
1.
2.
2V5^G0^Sμ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V_SD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V_DS = 30V
8
V_DS = 48V
6
4
2
※ Note : I_D = 13.6A
0
0
2
4
6
8
10
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
3
FQD13N06L / FQU13N06L Rev. C3
www.fairchildsemi.com