FQU13N06LTU Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

FQD13N06L / FQU13N06L
N-Channel QFET^® MOSFET
60 V, 11 A, 115 mΩ
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to
reduce on-state resistance, and to provide superior
switching performance and high avalanche energy
strength. These devices are suitable for switched mode
power supplies, audio amplifier, DC motor control, and
variable switching power applications.
Features
• 11 A, 60 V, R_DS(on) = 115 mΩ (Max) @ V_GS = 10 V,
I_D = 5.5 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 17 pF)
• 100% Avalanche Tested
• Low Level Gate Drive Requirements Allowing
Direct Operation form Logic Drivers
D
D
G
S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings T_C = 25^oC unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQD13N06LTM / FQU13N06LTU
FQU13N06LTU_WS
60
11
7
44
± 20
90
11
2.8
7.0
2.5
28
0.22
-55 to +150
300
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Thermal Characteristics
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.
Thermal Resistance, Junction to Ambient (*1 in² Pad of 2-oz Copper), Max.
FQD13N06LTM
FQU13N06LTU
FQU13N06LTU_WS
4.5
110
50
Unit
o_C/W
©2000 Fairchild Semiconductor Corporation
1
FQD13N06L / FQU13N06L Rev. C3
www.fairchildsemi.com