FQU13N06LTU Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET

Package Marking and Ordering Information
Part Number
FQD13N06LTM
FQU13N06LTU
FQU13N06LTU_WS
Top Mark
FQD13N06L
FQU13N06L
FQU13N06LS
Package
D-PAK
I-PAK
I-PAK
Packing Method
Tape and Reel
Tube
Tube
Reel Size
330 mm
N/A
N/A
Tape Width
16 mm
N/A
N/A
Quantity
2500 units
70 units
75 units
Electrical Characteristics T_C = 25^oC unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Unit
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 µA
60
--
--
V
∆BV_{DSS Breakdown Voltage Temperature}
/ ∆T_J Coefficient
I_D = 250 µA, Referenced to 25°C -- 0.05
--
V/°C
I_DSS
Zero Gate Voltage Drain Current
V_DS = 60 V, V_GS = 0 V
V_DS = 48 V, T_C = 150°C
--
--
1
µA
--
--
10
µA
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 20 V, V_DS = 0 V
--
--
100
nA
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -20 V, V_DS = 0 V
--
-- -100 nA
On Characteristics
V_GS(th) Gate Threshold Voltage
R_DS(on)
Static Drain-Source
On-Resistance
g_FS
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 5.5 A
V_GS = 5 V, I_D = 5.5 A
V_DS = 25 V, I_D = 5.5 A
1.0 --
2.5
V
-- 0.092 0.115
-- 0.115 0.145
Ω
--
6
--
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
-- 270 350
pF
--
95 125
pF
--
17
23
pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 30 V, I_D = 6.8 A,
R_G = 25 Ω
--
8
25
ns
--
90 190
ns
--
20
50
ns
(Note 4)
--
40
90
ns
V_DS = 48 V, I_D = 13.6 A,
-- 4.8 6.4
nC
V_GS = 5 V
-- 1.6
--
nC
(Note 4)
--
2.7
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 11 A
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 13.6 A,
dI_F / dt = 100 A/µs


1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 870 µH, IAS = 11 A, VDD = 25 V, RG = 25 Ω, starting TJ = 25^oC.
3. ISD ≤ 13.6 A, di/dt ≤ 300 A/μs, VDD ≤ BVDSS, starting TJ = 25^oC.
4. Essentially independent of operating temperature.
--
--
11
A
--
--
44
A
--
--
1.5
V
--
45
--
ns
--
45
--
nC
©2000 Fairchild Semiconductor Corporation
2
FQD13N06L / FQU13N06L Rev. C3
www.fairchildsemi.com