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FQP3N50C Datasheet, PDF (4/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
1.1
1.0
0.9
0.8
-100
Notes :
1. V = 0 V
GS
2. ID = 250µA
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
Figure 9-1. Maximum Safe Operating Area
of FQP3N50C
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
Notes :
1. VGS = 10 V
2. ID = 1.5 A
-50
0
50
100
150
200
TJ, Junction Temperature [°C]
Figure 9-2. Maximum Safe Operating Area
of FQPF3N50C
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
3
102
101
100
10-1
10-2
100
Operation in This Area
is Limited by R DS(on)
100 µs
1 ms
10 ms
100 ms
DC
Notes :
1. TC = 25°C
2. TJ = 150°C
3. Single Pulse
101
102
103
VDS, Drain-Source Voltage [V]
2
1
0
25
50
75
100
125
150
TC, Case Temperature [°C]
4
FQP3N50C/FQPF3N50C Rev. A
www.fairchildsemi.com
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