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FQP3N50C Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET
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Package Marking and Ordering Information
Device Marking
FQP3N50C
FQPF3N50C
Device
FQP3N50C
FQPF3N50C
Package
TO-220
TO-220F
Reel Size
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--
Tape Width
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Electrical Characteristics TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Off Characteristics
BVDSS
∆BVDSS/
∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
VGS = 30 V, VDS = 0 V
VGS = -30 V, VDS = 0 V
500
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--
0.7
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--
--
--
--
--
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On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 1.5 A
2.0
--
--
2.1
VDS = 40 V, ID = 1.5 A
(Note 4)
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1.5
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
280
--
50
--
8.5
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 250 V, ID = 3 A,
RG = 25 Ω
--
10
--
25
--
35
(Note 4, 5)
--
25
VDS = 400 V, ID = 3 A,
VGS = 10 V
--
10
--
1.5
(Note 4, 5)
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5.5
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage
VGS = 0 V, IS = 3 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 3 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 40mH, IAS = 3A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 3A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
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--
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--
--
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170
(Note 4)
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0.7
Quantity
50
50
Max.
Units
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--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
4.0
V
2.5
Ω
--
S
365
pF
65
pF
11
pF
30
ns
60
ns
80
ns
60
ns
13
nC
--
nC
--
nC
3
A
12
A
1.4
V
--
ns
--
µC
2
FQP3N50C/FQPF3N50C Rev. A
www.fairchildsemi.com
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