FQP3N50C Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 500V N-Channel MOSFET

Typical Performance Characteristics
Figure 1. On-Region Characteristics
V_GS
Top : 15.0 V
10¹
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
10⁰
10^-1
10^-1
Notes :
1. 250µs Pulse Test
2. T_C = 25°C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
8.0
7.5
7.0
6.5
6.0
V_GS = 10V
5.5
5.0
4.5
4.0
V_GS = 20V
3.5
3.0
2.5
2.0
Note : T_J = 25°C
1.5
0
2
4
6
8
10
I_D, Drain Current [A]
Figure 5. Capacitance Characteristics
600
400
200
0
10^-1
C_iss
C_oss
C_rss
C_iss = C_gs + C_gd (C_ds = shorted)
C_oss = C_ds + C_gd
C =C
rss
gd
Note ;
1. V_GS = 0 V
2. f = 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10¹
150°C
10⁰
25°
-55°
10^-1
2
Note
1. V_DS = 40V
2. 250µs Pulse Test
4
6
8
10
V_GS , Gate-Source Voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
10⁰
10^-1
0.2
150°C
25°C
Notes :
1. V_GS = 0V
2. 250µs Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V_SD, Source-Drain voltage [V]
Figure 6. Gate Charge Characteristics
12
10
V_DS = 100V
8
V_DS = 250V
V_DS = 400V
6
4
2
Note : I = 3A
D
0
0
5
10
Q_G, Total Gate Charge [nC]
3
FQP3N50C/FQPF3N50C Rev. A
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