FQNL2N50BTA Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 500 V, 0.35 A, 5.3

Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
0.8
-100
※ Note :
1. V_GS = 0 V
2. I_D = 250 μ A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 7. Breakdown Voltage Variation
vs. Temperature
10¹
Operation in This Area
is Limited by R _DS(on)
10⁰
100 µs
1 ms
10 ms
100 ms
1s
10^-1
10 s
DC
10^-2
※ Notes :
1. T_C = 25 ^oC
2. T_J = 150 ^oC
3. Single Pulse
10^-3
10⁰
10¹
10²
10³
V_DS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
※ Note :
1. V_GS = 10 V
2. I_D = 1.05 A
-50
0
50
100
150
200
T_J, Junction Temperature [^oC]
Figure 8. On-Resistance Variation
vs. Temperature
0.40
0.35
0.30
0.25
0.20
0.15
0.10
0.05
0.00
25
50
75
100
125
150
T_C, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs. Case Temperature
10²
D = 0.5
0 .2
10¹
0 .1
0 .05
0 .02
0 .01
10⁰
sin g le p u ls e
※ N otes :
1.
Z_θ
(t)
JC
=
83
℃ /W
M ax.
2 . D uty F actor, D = t /t
12
3.
T
JM
-
T
C
=
P
DM
*
Z_θ
(t)
JC
P_DM
t₁
t₂
1 0 ^-4
1 0 ^-3
1 0 ^-2
1 0 ^-1
10⁰
10¹
10²
t₁, S q u a re W a ve P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2001 Fairchild Semiconductor Corporation
4
FQNL2N50B Rev. C1
www.fairchildsemi.com