FQNL2N50BTA Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 500 V, 0.35 A, 5.3

Typical Characteristics
10⁰ Top :
V_GS
5V
10 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10^-1
10^-2
10^-1
※ Note :
1. 250μ s Pulse Test
2. T_C = 25℃
10⁰
10¹
V_DS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
18
15
V = 10V
GS
12
V = 20V
GS
9
6
3
※ Note : T_J = 25℃
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
I_D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
350
300
250
200
150
100
50
0
10^-1
C
iss
C_oss
C
rss
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
※ Note :
1. V = 0 V
GS
2. f 1 MHz
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
10⁰
150℃
25℃
-55℃
10^-1
2
※ Note
1. V_DS = 50V
2. 250μ s Pulse Test
4
6
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10⁰
10^-1
0.2
150℃
25℃
※ Note :
1. V = 0V
GS
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
V = 100V
DS
10
V = 250V
DS
8
V_DS = 400V
6
4
2
※ Note : I_D = 2.1 A
0
0
1
2
3
4
5
6
7
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2001 Fairchild Semiconductor Corporation
3
FQNL2N50B Rev. C1
www.fairchildsemi.com