FQNL2N50BTA Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 500 V, 0.35 A, 5.3

Package Marking and Ordering Information
Part Number
FQNL2N50BTA
Top Mark
FQNL2N50B
Package
TO-92L
Packing Method Reel Size
AMMO
N/A
Tape Width
N/A
Quantity
2000 units
Electrical Characteristics
Symbol
Parameter
T_C = 25°C unless otherwise noted.
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BV_DSS Drain-Source Breakdown Voltage
V_GS = 0 V, I_D = 250 µA
500 --
∆BV_{DSS Breakdown Voltage Temperature}
/ ∆T_J Coefficient
I_D = 250 µA, Referenced to 25°C -- 0.48
I_DSS
Zero Gate Voltage Drain Current
V_DS = 500 V, V_GS = 0 V
V_DS = 400 V, T_C = 125°C
--
--
--
--
I_GSSF
Gate-Body Leakage Current, Forward V_GS = 30 V, V_DS = 0 V
--
--
I_GSSR
Gate-Body Leakage Current, Reverse V_GS = -30 V, V_DS = 0 V
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
V_GS(th) Gate Threshold Voltage
R_DS(on)
g_FS
Static Drain-Source
On-Resistance
Forward Transconductance
V_DS = V_GS, I_D = 250 µA
V_DS = V_GS, I_D = 250 mA
V_GS = 10 V, I_D = 0.175 A
V_DS = 50 V, I_D = 0.175 A
2.3 3.0 3.7
V
3.6 4.3 5.0
V
-- 4.2 5.3
Ω
-- 0.72
--
S
Dynamic Characteristics
C_iss
Input Capacitance
C_oss
Output Capacitance
C_rss
Reverse Transfer Capacitance
V_DS = 25 V, V_GS = 0 V,
f = 1.0 MHz
-- 180 230
pF
--
30
40
pF
--
4
6
pF
Switching Characteristics
t_d(on)
Turn-On Delay Time
t_r
Turn-On Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Turn-Off Fall Time
Q_g
Total Gate Charge
Q_gs
Gate-Source Charge
Q_gd
Gate-Drain Charge
V_DD = 250 V, I_D = 2.1 A,
R_G = 25 Ω
--
6
20
ns
--
25
60
ns
--
10
30
ns
(Note 3)
--
20
50
ns
V_DS = 400 V, I_D = 2.1 A,
-- 6.0 8.0
nC
V_GS = 10 V
-- 1.3
--
nC
(Note 3)
--
3.0
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I_S
Maximum Continuous Drain-Source Diode Forward Current
I_SM
Maximum Pulsed Drain-Source Diode Forward Current
V_SD
Drain-Source Diode Forward Voltage V_GS = 0 V, I_S = 0.35 A
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
V_GS = 0 V, I_S = 2.1 A,
dI_F / dt = 100 A/µs
--
--
0.35
A
--
--
1.4
A
--
--
1.4
V
-- 195
--
ns
-- 0.69
--
µC
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. I_SD ≤ 2.1 A, di/dt ≤ 200 A/µs, V_DD ≤ BV_DSS, starting T_J = 25°C.
3. Essentially independent of operating temperature.
©2001 Fairchild Semiconductor Corporation
2
FQNL2N50B Rev. C1
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