FQNL2N50BTA Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – N-Channel QFET MOSFET 500 V, 0.35 A, 5.3

FQNL2N50B
N-Channel QFET^® MOSFET
500 V, 0.35 A, 5.3 Ω
November 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• 0.35 A, 500 V, R_DS(on) = 5.3 Ω (Max.) @ V_GS = 10 V,
I_D = 0.175 A
• Low Gate Charge (Typ. 6 nC)
• Low Crss (Typ. 4 pF)
D
G
GDS
TO-92L
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
V_DSS
I_D
I_DM
V_GSS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
- Pulsed
Gate-Source Voltage
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering,
1/8" from case for 5 seconds.
(Note 1)
(Note 1)
(Note 1)
(Note 2)
S
FQNL2N50BTA
500
0.35
0.22
1.4
± 30
0.35
0.15
4.5
1.5
0.012
-55 to +150
300
Unit
V
A
A
A
V
A
mJ
V/ns
W
W/°C
°C
°C
Thermal Characteristics

+_θ
  
Thermal Resistance, Junction-to-Ambient, Max.
FQNL2N50BTA
83

6?
©2001 Fairchild Semiconductor Corporation
1
FQNL2N50B Rev. C1
www.fairchildsemi.com