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| FQI50N06TU Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 60 V, 50 A, 22 mΩ | |||
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Typical Characteristics (Continued)
1.2
1.1
1.0
0.9
â» Notes :
1. V =0V
2.
GS
ID =
250
μ
A
0.8
-100
-50
0
50
100
150
200
T, JunctionTemperature[oC]
J
Figure 7. Breakdown Voltage Variation
vs. Temperature
2.5
2.0
1.5
1.0
0.5
â» Notes :
1. VGS = 10 V
2. I = 25 A
D
0.0
-100
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
Figure 8. On-Resistance Variation
vs. Temperature
103
Operation in This Area
is Limited by R DS(on)
102
101
100
10-1
100μ s
1 ms
10 ms
DC
â» Notes :
1. TC = 25 oC
2. T = 175 oC
J
3. Single Pulse
100
101
102
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
60
50
40
30
20
10
0
25
50
75
100
125
150
175
T , Case Temperature [â]
C
Figure 10. Maximum Drain Current
vs. Case Temperature
100
D =0 .5
0 .2
1 0 -1
0 .1
0.0 5
0.0 2
0.0 1
sin g le p u ls e
â» Notes :
1 . Z θ J C( t ) = 1 . 2 4 â /W M a x .
2 . D u t y Fa c t o r , D = t /t
12
3 . T J M - T C = P D M * Z θ J C( t )
PDM
t1
t2
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2000 Fairchild Semiconductor Corporation
4
FQB50N06 / FQI50N06 Rev. C1
www.fairchildsemi.com
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