English
Language : 

FQI50N06TU Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 60 V, 50 A, 22 mΩ
◁
Package Marking and Ordering Information
Device Marking
FQB50N06
FQI50N06
Device
FQB50N06TM
FQI50N06TU
Package
D2-PAK
I2-PAK
Reel Size
330mm
-
Tape Width
24mm
-
Quantity
800
50
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min Typ Max Unit
Off Characteristics
BVDSS
∆BVDSS
/ ∆TJ
IDSS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 250 µA
60
ID = 250 µA, Referenced to 25°C --
VDS = 60 V, VGS = 0 V
--
VDS = 48 V, TC = 150°C
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V
--
--
0.06
--
--
--
--
--
--
1
10
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on) Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 25 A
VDS = 25 V, ID = 25 A
2.0 --
4.0
V
-- 0.018 0.022 Ω
--
22
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Crss
Output Capacitance
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1180 1540 pF
-- 440 580
pF
--
65
90
pF
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 30 V, ID = 25 A,
RG = 25 Ω
--
15
40
ns
-- 105 220
ns
--
60 130
ns
(Note 4)
--
65 140
ns
VDS = 48 V, ID = 50 A,
--
31
41
nC
VGS = 10 V
--
8
--
nC
(Note 4)
--
13
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 50 A
trr
Reverse Recovery Time
VGS = 0 V, IS = 50 A,
Qrr
Reverse Recovery Charge
dIF / dt = 100 A/µs
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 230µH, IAS = 50A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 50A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
--
--
50
A
--
--
200
A
--
--
1.5
V
--
52
--
ns
--
75
--
nC
©2000 Fairchild Semiconductor Corporation
2
FQB50N06 / FQI50N06 Rev. C1
www.fairchildsemi.com
 ▷