FQI50N06TU Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 60 V, 50 A, 22 mΩ

Typical Characteristics
V
GS
Top : 15.0 V
10²
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10¹
10⁰
10^-1
※ Notes :
1. 250μ s Pulse Test
2. T = 25℃
C
10⁰
10¹
V_DS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.05
0.04
V_GS = 10V
0.03
V = 20V
GS
0.02
0.01
0.00
0
※ Note : T_J = 25℃
50
100
150
200
I_D, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
2000
1500
C_oss
C_iss
C = C + C (C = shorted)
iss gs gd ds
C_oss = C_ds + C_gd
C_rss = C_gd
※ Notes :
1. V = 0 V
GS
2. f = 1 MHz
1000
C
rss
500
0
10^-1
10⁰
10¹
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
10²
10¹
175℃
25℃
10⁰
2
-55℃
※ Notes :
1.
2.
2V5^DS0μ^=s30PVulse
Test
4
8
10
V , Gate-Source Voltage [V]
GS
Figure 2. Transfer Characteristics
10²
10¹
10⁰
0.2
175℃
25℃
※ Notes :
1.
2.
2V5^GS0μ^=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
V = 30V
DS
V = 48V
DS
8
6
4
2
※ Note : I = 50A
D
0
0
5
10
15
20
25
30
35
Q_G, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
3
FQB50N06 / FQI50N06 Rev. C1
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