FQI50N06TU Datasheet, PDF (1/9 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 60 V, 50 A, 22 mΩ

FQB50N06 / FQI50N06
N-Channel QFET^® MOSFET
60 V, 50 A, 22 mΩ
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
• 50 A , 60 V, R_DS(on) = 22 mΩ (Max.) @V_GS = 10 V,
I_D = 25 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 65 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
D
G
S
D²-PAK
GDS
I²-PAK
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
I_D
I_DM
V_GSS
E_AS
I_AR
E_AR
dv/dt
P_D
T_J, T_STG
T_L
Parameter
Drain-Source Voltage
Drain Current
- Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (T_A = 25°C) *
Power Dissipation (T_C = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
FQB50N06TM / FQI50N06TU
60
50
35.4
200
± 25
490
50
12
7.0
3.75
120
0.8
-55 to +175
300
Symbol
Parameter
R_JC
R_JA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (* 1 in² pad of 2 oz copper), Max.
FQB50N06TM
FQI50N06TU
1.24
62.5
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
o_C/W
©2000 Fairchild Semiconductor Corporation
1
FQB50N06 / FQI50N06 Rev. C1
www.fairchildsemi.com