FGP5N60LS Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 600V, 5A Field Stop IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 25^oC
16
12
8
10A
4
5A
I_C = 2.5A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Capacitance Characteristics
600
Common Emitter
V_GE = 0V, f = 1MHz
500
T_C = 25^oC
400
C_ies
300
200
C_oes
C_res
100
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 11. SOA Characteristics
100
10s
10
100s
1ms
1
10ms
DC
Single Nonrepetitive
0.1 _{Pulse TC = 25}^o_C
Curves must be derated
linearly with increase
in temperature
0.01
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 8. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
10A
4
5A
I_C = 2.5A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 10. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 100V
300V
9
200V
6
3
0
0
5
10
15
20
Gate Charge, Q_g [nC]
Figure 12. Turn-on Characteristics vs.
Gate Resistance
10
t_d(on)
1
0.5
0
t_r
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 5A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G []
FGP5N60LS Rev. A1
4
www.fairchildsemi.com