FGP5N60LS Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V, 5A Field Stop IGBT

FGP5N60LS
600V, 5A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: V_CE(sat) =1.7V @ I_C = 5A
• High Input Impedance
• RoHS Compliant
Applications
• HID ballast and Wall dimmer
February 2010
tm
General Description
Using novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for HID bal-
last where low conduction losses are essential.
C
GCE
TO-220
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test , Pulse width=100usec , Duty=0.2, V_GE=13.5V
Thermal Characteristics
Symbol
R_JC
R_JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
600
20
10
5
36
83
33
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
1.5
62.5
Units
V
V
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2010 Fairchild Semiconductor Corporation
1
FGP5N60LS Rev. A1
www.fairchildsemi.com