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FGP5N60LS Datasheet, PDF (2/8 Pages) Fairchild Semiconductor – 600V, 5A Field Stop IGBT
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Package Marking and Ordering Information
Device Marking
FGP5N60LS
Device
FGP5N60LS
Package
TT220
Packaging
Type
Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
BVCES
TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250A
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250A
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat)
Collector to Emitter Saturation Voltage
Collector to Emitter Saturation Voltage
IC = 250A, VCE = VGE
IC = 5A, VGE = 15V
IC = 5A, VGE = 15V,
TC = 125oC
IC = 14A, VGE = 12V
IC = 14A, VGE = 12V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 400V, IC = 5A,
RG = 10, VGE = 15V,
Inductive Load, TC = 25oC
VCC = 400V, IC = 5A,
RG = 10, VGE = 15V,
Inductive Load, TC = 125oC
VCE = 400V, IC = 5A,
VGE = 15V
600
-
-
V
-
0.8
-
V/oC
-
-
250
A
-
-
±400
nA
2.7
3.9
4.5
V
-
1.7
2.1
V
-
1.8
-
V
-
2.7
3.2
V
-
3.1
-
V
-
278
-
pF
-
28
-
pF
-
11
-
pF
-
4.3
-
ns
-
1.6
-
ns
-
36
-
ns
-
118
-
ns
-
38
-
J
-
130
-
J
-
168
-
J
-
4.1
-
ns
-
1.8
-
ns
-
37
-
ns
-
150
-
ns
-
80
-
J
-
168
-
J
-
248
-
J
-
18.3
-
nC
-
1.6
-
nC
-
7.9
-
nC
FGP5N60LS Rev. A1
2
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