FGP5N60LS Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V, 5A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
40
T_C = 25^oC
20V
17V
12V
15V
30
13.5V
10V
20
10
V_GE = 8V
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
40
Common Emitter
V_GE = 15V
T_C = 25^oC
30 _{TC = 125}o_C
20
10
Figure 2. Typical Output Characteristics
40
T_C = 125^oC
30
20V
17V
15V
13.5V
12V
20
10V
10
V_GE = 8V
0
0
2
4
6
8
10
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
30
Common Emitter
V_CE = 20V
T_C = 25^oC
T_C = 125^oC
20
10
0
0
1
2
3
4
5
6
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
3.0
Common Emitter
V_GE = 15V
2.5
10A
2.0
5A
1.5
I_C = 2.5A
1.0
25
50
75
100
125
Collector-EmitterCase Temperature, T_C [^oC]
0
2
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
12
8
5A
10A
4
I_C = 2.5A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGP5N60LS Rev. A1
3
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