RFD16N05LSM9A Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – N-Channel Logic Level Power MOSFET 50V, 16A, 47 mΩ

RFD16N05LSM
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
20
15
10
5
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
10²
T_C = 25^oC
T_J = MAX RATED
I_D MAX CONTINUOUS
10
OPERATION IN THIS AREA
LIMITED BY r_DS(ON)
1
DC
0.1
1
10
10²
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
10²
Idm
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
If R = 0
t_AV = (L)(I_AS)/(1.3 RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3 RATED BV_DSS - V_DD) +1]
1
0.01
0.10
1
10
t_AV, TIME IN AVALANCHE (ms)
FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING SOA
(SINGLE PULSE UIS SOA)
45
V_GS = 10V
30
15
V_GS = 4V
V_GS = 5V
T_C = 25^oC
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
V_GS = 3V
45
V_DS = 15V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
30
15
V_GS = 2V
0
0
1.5
3.0
4.5
6.0
7.5
V_DS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 5. SATURATION CHARACTERISTICS
0
0
1.5
3.0
4.5
6.0
V_GS, GATE TO SOURCE VOLTAGE (V)
FIGURE 6. TRANSFER CHARACTERISTICS
©2003 Fairchild Semiconductor Corporation
RFD16N05LSM Rev. C1