RFD16N05LSM9A Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – N-Channel Logic Level Power MOSFET 50V, 16A, 47 mΩ

RFD16N05LSM
Absolute Maximum Ratings T_C = 25^oC, Unless Otherwise Specified
Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DS
Drain to Gate Voltage (R_GS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_DGR
Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I_D
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I_DM
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V_GS
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P_D
Derate Above 25^oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_J, T_STG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_L
Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T_pkg
RFD16N05LSM9A
50
50
16
45
±10
60
0.48
-55 to 150
300
260
UNITS
V
V
A
A
V
W
W/^oC
o_C
o_C
o_C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. T_J = 25^oC to 125^oC.
Electrical Specifications T_C = 25^oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate to Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance (Note 2)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at 5V
Threshold Gate Charge
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
BV_DSS
V_GS(TH)
I_DSS
I_GSS
r_DS(ON)
t_(ON)
t_d(ON)
t_r
t_d(OFF)
t_f
t_(OFF)
Q_g(TOT)
Q_g(5)
Q_g(TH)
R_θJC
R_θJA
I_D = 250mA, V_GS = 0V, Figure 10
V_GS = V_DS, I_D = 250mA, Figure 9
V_DS = 40V, V_GS = 0V
T_C = 150^oC
V_GS = ±10V, V_DS = 0V
I_D = 16A, V_GS = 5V
I_D = 16A, V_GS = 4V
V_DD = 25V, I_D = 8A,
V_{GS =} 5V, R_GS = 12.5Ω
Figures 15, 16
V_GS = 0V to 10V
V_GS = 0V to 5V
V_GS = 0V to 1V
V_DD = 40V,
I_D = 16A,
R_L = 2.5Ω
Figures 17, 18
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Source to Drain Diode Voltage
V_SD
I_SD = 16A
Diode Reverse Recovery Time
t_rr
I_SD = 16A, dI_SD/dt = 100A/µs
NOTES:
2. Pulse Test: Pulse Width ≤300ms, Duty Cycle ≤2%.
3. Repetitive Rating: Pulse Width limited by max junction temperature.
MIN TYP MAX UNITS
50
-
-
V
1
-
2
V
-
-
1
µA
-
-
50
µA
-
-
100
nA
-
-
0.047
Ω
-
-
0.056
Ω
-
-
60
ns
-
14
-
ns
-
30
-
ns
-
42
-
ns
-
14
-
ns
-
-
100
ns
-
-
80
nC
-
-
45
nC
-
-
3
nC
-
-
2.083 ^oC/W
-
-
100
o_C/W
MIN TYP MAX UNITS
-
-
1.5
V
-
-
125
ns
©2003 Fairchild Semiconductor Corporation
RFD16N05LSM Rev. C1