RFD16N05LSM9A Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – N-Channel Logic Level Power MOSFET 50V, 16A, 47 mΩ

Data Sheet
RFD16N05LSM
September 2013
N-Channel Logic Level Power MOSFET
50V, 16A, 47 mΩ
These are N-Channel logic level power MOSFETs
manufactured using the MegaFET process. This process,
which uses feature sizes approaching those of LSI
integrated circuits gives optimum utilization of silicon,
resulting in outstanding performance. They were designed
for use with logic level (5V) driving sources in applications
such as programmable controllers, switching regulators,
switching converters, motor relay drivers and emitter
switches for bipolar transistors. This performance is
accomplished through a special gate oxide design which
provides full rated conductance at gate biases in the 3V to
5V range, thereby facilitating true on-off power control
directly from logic circuit supply voltages.
Formerly developmental type TA09871.
Ordering Information
PART NUMBER
RFD16N05LSM9A
PACKAGE
TO-252AA
BRAND
RFD16N05LSM
Features
• 16A, 50V
• r_DS(ON) = 0.047Ω
• UIS SOA Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drives
• Can be Driven Directly from CMOS, NMOS, TTL Circuits
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
Packaging
JEDEC TO-252AA
GATE
SOURCE
DRAIN (FLANGE)
©2003 Fairchild Semiconductor Corporation
RFD16N05LSM Rev. C1