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FDMS9410_F085 Datasheet, PDF (3/6 Pages) Fairchild Semiconductor – Distributed Power Architectures and VRM
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Typical Characteristics
1.2
100
1.0
CURRENT LIMITED
BY PACKAGE
VGS = 10V
80
0.8
60
0.6
40
0.4
0.2
20
0.0
0
25 50 75 100 125 150 175
TC, CASE TEMPERATURE(oC)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
2
DUTY CYCLE - DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.1
0.01
SINGLE PULSE
0
25
50 75 100 125 150 175 200
TC, CASE TEMPERATURE(oC)
Figure 2. Maximum Continuous Drain Current vs.
Case Temperature
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
0.01
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1000
VGS = 10V
100
TC = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I2
175 - TC
150
SINGLE PULSE
10
10-5
10-4
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION(s)
Figure 4. Peak Current Capability
©2015 Fairchild Semiconductor Corporation
3
FDMS9410_F085 Rev. 1.0
www.fairchildsemi.com
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