FDMS9410_F085 Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – Distributed Power Architectures and VRM

Electrical Characteristics T_J = 25°C unless otherwise noted.
Symbol
Parameter
Off Characteristics
Test Conditions
Min. Typ. Max. Units
B_VDSS Drain-to-Source Breakdown Voltage I_D = 250μA, V_GS = 0V
40
I_DSS
Drain-to-Source Leakage Current
V_DS=40V, T_J = 25^oC
-
V_GS = 0V T_J = 175^oC (Note 4)
-
I_GSS
Gate-to-Source Leakage Current
V_GS = ±20V
-
On Characteristics
-
-
V
-
1
μA
-
1
mA
-
±100 nA
V_GS(th)
R_DS(on)
Gate to Source Threshold Voltage
Drain to Source On Resistance
Dynamic Characteristics
V_GS = V_DS, I_D = 250μA
2.0
3.2
4.0
V
I_D = 50A, ^TJ ^{= 25oC}
-
3.7 4.4 mΩ
V_GS= 10V _{TJ = 175}^o_{C (Note 4)}
-
6.6 7.9 mΩ
C_iss
C_oss
C_rss
R_g
Q_g(ToT)
Q_g(th)
Q_gs
Q_gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Threshold Gate Charge
Gate-to-Source Gate Charge
Gate-to-Drain “Miller“ Charge
Switching Characteristics
V_DS = 20V, V_GS = 0V,
f = 1MHz
-
1790
-
pF
-
620
-
pF
-
32
-
pF
f = 1MHz
-
2.0
-
Ω
V_GS = 0 to 10V
V_DD = 32V
-
24
36
nC
V_GS = 0 to 2V
I_D = 50A
-
3.3
-
nC
-
9.1
-
nC
-
4.5
-
nC
t_on
t_d(on)
t_r
t_d(off)
t_f
t_off
Turn-On Time
Turn-On Delay
Rise Time
Turn-Off Delay
Fall Time
Turn-Off Time
Drain-Source Diode Characteristics
V_DD = 20V, I_D = 50A,
V_GS = 10V, R_GEN = 6Ω
-
-
27
ns
-
12.1
-
ns
-
5.9
-
ns
-
18.8
-
ns
-
5.0
-
ns
-
-
31
ns
V_SD
Source-to-Drain Diode Voltage
t_rr
Reverse-Recovery Time
Q_rr
Reverse-Recovery Charge
I_SD =50A, V_GS = 0V
I_SD = 25A, V_GS = 0V
I_F = 50A, dI_SD/dt = 100A/μs
V_DD = 32V
-
-
1.25
V
-
-
1.2
V
-
45.5 59
ns
-
33.2 43
nC
Note:
4: The maximum value is specified by design at T_J = 175°C. Product is not tested to this condition in production.
©2015 Fairchild Semiconductor Corporation
2
FDMS9410_F085 Rev. 1.0
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