RF63 Datasheet, PDF (8/91 Pages) List of Unclassifed Manufacturers – Ultra-Low Power Integrated UHF Transceiver

ADVANCED COMMUNICATIONS & SENSING
RF63
2. Electrical Characteristics
2.1. ESD Notice
The RF63 is a high performance radio frequency device. It satisfies:
• Class 2 of the JEDEC standard JESD22-A114-B (Human Body Model), except on pins 3-4-5-27-28-29-32
where it satisfies Class 1A.
• Class III of the JEDEC standard JESD22-C101C (Charged Device Model) on all pins.
It should thus be handled with all the necessary ESD precautions to avoid any permanent damage.
2.2. Absolute Maximum Ratings
Stresses above the values listed below may cause permanent device failure. Exposure to absolute maximum
ratings for extended periods may affect device reliability.
Table 3: Absolute Maximum Ratings
Symbol
VDDmr
Tmr
Pmr
Description
Supply voltage
Storage temperature
Input level
Min
Max
-0.3
3.7
-55
125
-
0
Unit
V
°C
dBm
2.3. Operating Range
Table 4: Operating Range
Symbol
VDDop
Trop
ML
Description
Supply Voltage
Temperature
Input Level
Min
Max
Unit
2.1
3.6
V
-40
+85
°C
-
0
dBm
2.4. Chip Specification
Conditions: Temp = 25 °C, VDD = 3.3 V, crystal freq uency = 12.8 MHz, carrier frequency = 869 or 915 MHz,
modulation FSK, data rate = 25 kb/s, Fdev = 50 kHz, fc = 100 kHz, unless otherwise specified.
2.4.1. Power Consumption
Table 5: Power Consumption Specification
Symbol
Description
Conditions
Min
Typ
Max Unit
IDDSL
Supply current, Sleep mode
-
0.1
2
µA
IDDST
Supply current in standby
mode, CLKOUT disabled
Crystal oscillator running⁽²⁾
-
65
80
µA
IDDFS
Supply current in FS mode
Frequency synthesizer
running
-
1.3
1.7
mA
IDDR
Supply current in Rx mode
-
3.0
3.5
mA
IDDT
Supply current in Tx mode
Output power = +10 dBm
Output power = 1dBm⁽¹⁾
-
-
25
30
mA
16
21
mA
(1) _{Guaranteed by design and characterization}
(2) _{Crystal Cload=10pF, C0=2.5pF, Rm=15 Ohms}
Page 8 of 91
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