NPT35050A Datasheet, PDF (8/10 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 65W RF Power Transistor

NPT35050A
V _GATE
C2
C16 IC1
P1
C1
R1
R2
C3
C4 C5
C10
W=100mil
L=500mil
RF _IN
C12
W=68mil
L=720mil
C14
W=175mil
L=50mil
W=680mil
L=450mil
C9
C11
R3
C17
W=100mil
L=500mil
C6
C7 C8
V _DRAIN
C13
W=550mil
L=210mil
W=140mil
L=245mil
C15
W=140mil W=68mil
L=205mil L=50mil
W=68mil
L=440mil
W=68mil
L=390mil
RF _OUT
Figure 15 - APP-NPT35050A-35 Demonstration Board Equivalent Circuit
Table 1: APP-NPT35050A-35 Demonstration Board Bill of Materials
Component
C1, C2, C3
Value
10 uF
ID
16V Ceramic X7R (1210)
C4, C7
0.01 uF
100V Ceramic X7R (1206)
C5, C8
0.10 uF
100V Ceramic X7R (1206)
C6, C9
1.0 uF
100V CeramicX7R (1812)
C10, C11, C12, C13
5.6 pF
ATC600F5R6CT
C14
1.0 pF
ATC600F1R0AT
C15
1.5 pF
ATC600F1R5AT
C16
150uF
16V, Aluminum Electrolytic - Nichicon (PW)
C17
270uF
63V, Aluminum Electrolytic - UCC (LXY)
R1
12k ohm
0603
R2
10 ohm
0805
R3
0.33 ohm
0805
P1
20k ohm
Potentiometer - Bourns (3224 series)
IC1
IC LT1964-BYP
Substrate
Taconic RF35 t=30mil, e_r=3.5, 1 oz. Cu
NPT35050A
Page 8
NDS-003 Rev.3, April 2013