NPT35050A Datasheet, PDF (2/10 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 65W RF Power Transistor

NPT35050A
DC Specifications: T_C=25°C
Symbol Parameter
Off Characteristics
V_BDS
I_DLK
Drain-Source Breakdown Voltage
(V_GS=-8V, I_DQ=36mA)
Drain-Source Leakage Current
(V_GS=-8V, V_DS=60V)
On Characteristics
V_T
V_GSQ
R_ON
I_D
Gate Threshold Voltage
(V_DS = 28V, I_DQ = 36mA)
Gate Quiescent Voltage
(V_DS = 28V, I_DQ = 750mA)
On Resistance
(V_GS = 2V, I_DQ = 270mA)
Drain Current
(V_DS = 7V pulsed, 300ms pulse width,
0.2% duty cycle, V_GS=2V)
Min
Typ
Max
Units
100
-
-
-
-
V
18
mA
-2.3
-1.8
-1.3
V
-2.0
-1.5
-1.0
V
-
0.13
0.15
W
-
19.5
-
A
Absolute Maximum Ratings: Not simultaneous, T_C=25°C unless otherwise noted
Symbol Parameter
V_DS
V_GS
P_T
q_JC
T_STG
T_J
HBM
MM
Drain-Source Voltage
Gate-Source Voltage
Total Device Power Dissipation (Derated above 25°C)
Thermal Resistance (Junction-to-Case)
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Max
Units
100
V
-10 to 3
V
90
W
1.95
°C/W
-65 to 150
°C
200
°C
1C (>1000V)
M3 (>200V)
NPT35050A
Page 2
NDS-003 Rev.3, April 2013