NPT35050A Datasheet, PDF (1/10 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 65W RF Power Transistor

NPT35050A
Gallium Nitride 28V, 65W RF Power Transistor
Built using the SIGANTIC® NRF1 process - A proprietary GaN-on-Silicon technology
FEATURES
• Optimized for CW, pulsed, WiMAX, and other
applications from 3300 – 3800 MHz
• 90W P_3dB PEP power
• 65W P_3dB CW power
• 6W linear power @ 2.0% EVM for single carrier
OFDM, 10.3dB peak/avg, 3.5MHz channel
bandwidth, 12dB gain, 18% efficiency
• Qualified for operation up to 32V
• 100% RF tested
• Thermally enhanced industry standard package
• High reliability gold metallization process
• Lead-free and RoHS compliant
• Subject to 3A001b.3.a Export Control
3300 - 3800 MHz
65 Watt, 28 Volt
GaN HEMT
RF Specifications (CW): V_DS = 28V, I_DQ = 750mA, Frequency = 3500MHz, T_C = 25°C, Measured in Nitronex Test Fixture
Symbol Parameter
Min
Typ
Max
Units
P_3dB
G_SS
h
Y
Average Output Power at 3dB Compression
Small Signal Gain
Drain Efficiency at 3dB Compression
Output Mismatch Stress, VSWR = 10:1, all phase
angles at 3500MHz)
-
65
-
W
11
12.5
13.5
dB
40
45
-
%
No Performance Degradation After Test
Typical 2-Tone Performance: V_DS = 28V, I_DQ = 750mA, Frequency = 3500MHz, Tone Spacing = 0.1MHz, T_C = 25°C
Measured in Load-Pull System
Symbol Parameter
Typ
Units
P_3dB,PEP Peak Envelope Power at 3dB Compression
93
W
P_1dB,PEP Peak Envelope Power at 1dB Compression
55
W
P_IMD3
Peak Envelope Power at -35dBm IMD3
71
W
Typical OFDM Performance: V_DS = 28V, I_DQ = 750mA, Single carrier OFDM waveform 64-QAM 3/4, 8 burst, 20ms
frame, 15ms frame data, 3.5 MHz channel bandwidth. Peak/Avg. = 10.3dB @ 0.01% probability on CCDF. Frequency =
3400 - 3600MHz. P_OUT,AVG = 6W, T_C = 25°C. Measured in Nitronex Test Fixture
Symbol Parameter
Typ
Units
G_P
h
EVM
Power Gain
Drain Efficiency
Error Vector Magnitude
12
dB
18
%
2.0
%
NPT35050A
Page 1
NDS-003 Rev.3, April 2013