NPT35050A Datasheet, PDF (5/10 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 65W RF Power Transistor

NPT35050A
Figure 6 - Typical Device Linearity over Temperature
in Nitronex Demonstration Board,
V_DS = 28V, I_DQ = 750mA, 3400MHz
Figure 7 - Typical Device Gain and Efficiency over
Temperature in Nitronex Demonstration Board,
V_DS = 28V, I_DQ = 750mA, 3400MHz
Figure 8 - Typical IMD3 Performance at
V_DS = 28V, I_DQ = 750mA, 3500MHa
Figure 9 - Typical S₁₁ and S₂₁ in Nitronex
Demonstration Board,
P_IN = 0 dBm, V_DS = 28V, I_DQ = 750mA
NPT35050A
Page 5
NDS-003 Rev.3, April 2013