AUIRF3808S Datasheet, PDF (7/13 Pages) International Rectifier – HEXFET Power MOSFET

AUIRF3808S
VDS
L
RG
20V
tp
D.U.T
I_AS
0.01
15V
DRIVER
+
- ^VDD
A
Fig 12a. Unclamped Inductive Test Circuit
V_(BR)DSS
tp
800
ID
TOP
34A
58A
640
BOTTOM
82A
480
320
160
0
25
50
75
100
125
150
Starting Tj, Junction Temperature ( ^° C)
I_AS
Fig 12b. Unclamped Inductive Waveforms
Q_G
10 V
Q_GS
Q_GD
V_G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
12V
.2F
.3F
D.U.T.
+
-V^DS
V_GS
3mA
I_G
I_D
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
3.5
3.0
2.5
ID = 250μA
2.0
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150 175 200
TJ , Temperature ( °C )
Fig 14. Threshold Voltage Vs. Temperature
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