AUIRF3808S Datasheet, PDF (2/13 Pages) International Rectifier – HEXFET Power MOSFET

AUIRF3808S
Static Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V_(BR)DSS
Drain-to-Source Breakdown Voltage
75 ––– ––– V VGS = 0V, ID = 250μA
V_(BR)DSS/T_J Breakdown Voltage Temp. Coefficient
R_DS(on)
Static Drain-to-Source On-Resistance
f ^{––– 0.086 ––– V/°C Reference to 25°C, ID = 1.0mA}
––– 5.9 7.0 m VGS = 10V, ID = 82A
V_GS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
2.0 ––– 4.0
100 ––– –––
V VDS = VGS, ID = 250μA
S VDS = 25V, ID = 82A
I_DSS
Drain-to-Source Leakage Current
––– ––– 20
––– ––– 250
μA VDS = 75V, VGS = 0V
V_DS = 60V, V_GS = 0V, T_J = 150°C
I_GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– ––– 200 nA VGS = 20V
––– ––– -200
V_GS = -20V
Dynamic Electrical Characteristics @ T_J = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
Q_g
Total Gate Charge
Q_gs
Gate-to-Source Charge
Q_gd
Gate-to-Drain ("Miller") Charge
t_d(on)
Turn-On Delay Time
––– 150 220 nC ID = 82A
––– 31 47
––– 50 76
f ^{VDS = 60V}
V_GS = 10V
––– 16 ––– ns VDD = 38V
t_r
Rise Time
t_d(off)
Turn-Off Delay Time
t_f
Fall Time
––– 140 –––
––– 68 –––
––– 120 –––
I_D = 82A
f ^{RG = 2.5}
V_GS = 10V
L_D
Internal Drain Inductance
––– 4.5 ––– nH Between lead,
D
6mm (0.25in.)
L_S
Internal Source Inductance
––– 7.5 –––
from package
G
C_iss
Input Capacitance
and center of die contact
S
––– 5310 ––– pF VGS = 0V
C_oss
Output Capacitance
––– 890 –––
V_DS = 25V
C_rss
Reverse Transfer Capacitance
––– 130 –––
ƒ = 1.0 MHz, See Fig. 5
C_oss
Output Capacitance
C_oss
Output Capacitance
––– 6010 –––
––– 570 –––
V_GS = 0V, V_DS = 1.0V, ƒ = 1.0MHz
V_GS = 0V, V_DS = 60V, ƒ = 1.0MHz
C_oss eff.
Effective Output Capacitance (Time Related) ––– 1140 –––
V_GS = 0V, V_DS = 0V to 60V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
I_S
Continuous Source Current
––– ––– 106 A MOSFET symbol
D
(Body Diode)
showing the
I_SM
Ãd ^{Pulsed Source Current}
(Body Diode)
V_SD
Diode Forward Voltage
t_rr
Reverse Recovery Time
Q_rr
Reverse Recovery Charge
––– ––– 550 A integral reverse
G
––– ––– 1.3
f ^{p-n junction diode.}
V TJ = 25°C, IS = 82A, VGS = 0V
S
f ^{––– 93 140 ns TJ = 25°C, IF = 82A}
––– 340 510 nC di/dt = 100A/μs
t_on
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
‚ Starting T_J = 25°C, L = 0.130mH
R_G = 25, I_AS = 82A. (See Figure 12).
ƒ I_SD  82A, di/dt  310A/μs, V_DD V_(BR)DSS,
T_J  175°C
„ Pulse width  400μs; duty cycle  2%.
… C_oss eff. is a fixed capacitance that gives the same charging time
as C_oss while V_DS is rising from 0 to 80% V_DSS .
† Limited by T_Jmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
‡ When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
ˆ R_ is measured at T_J approximately 90°C.
2
www.irf.com