AUIRF3808S Datasheet, PDF (4/13 Pages) International Rectifier – HEXFET Power MOSFET

AUIRF3808S
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
10
4.5V
20μs PULSE WIDTH
T J= 25 ^° C
1
0.1
1
10
100
V _DS, Drain-to-Source Voltage (V)
1000
VGS
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
100
4.5V
10
20μs PULSE WIDTH
T J= 175 ^° C
1
0.1
1
10
100
V _DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
TJ = 175°C
100.00
TJ = 25°C
10.00
1.0
VDS = 15V
20μs PULSE WIDTH
3.0 5.0 7.0 9.0 11.0 13.0 15.0
VGS, Gate-to-Source Voltage (V)
3.0
I _D = 137A
2.5
2.0
1.5
1.0
0.5
V _GS = 10V
0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
T_J, Junction Temperature
( ^°C)
Fig 3. Typical Transfer Characteristics
4
Fig 4. Normalized On-Resistance
Vs. Temperature
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