AUIRF3808S Datasheet, PDF (1/13 Pages) International Rectifier – HEXFET Power MOSFET

AUTOMOTIVE GRADE
PD - 97698A
Features
● Advanced Planar Technology
● Low On-Resistance
● Dynamic dV/dT Rating
● 175°C Operating Temperature
G
● Fast Switching
● Fully Avalanche Rated
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free, RoHS Compliant
● Automotive Qualified *
AUIRF3808S
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S _ID
75V
5.9m
7.0m
106A
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing tech-
niques to achieve low on-resistance per silicon
area. This benefit combined with the fast switch-
ing speed and ruggedized device design that
HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient
and reliable device for use in Automotive and a
wide variety of other applications.
S
GD
D²Pak
AUIRF3808S
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (T_A) is 25°C, unless otherwise specified.
Symbol
Parameter
I_D @ T_C = 25°C Continuous Drain Current, VGS @ 10V
™ ^{ID @ TC = 100°C Continuous Drain Current, VGS @ 10V}
I_DM
Pulsed Drain Current
P_D @T_C = 25°C Maximum Power Dissipation
Linear Derating Factor
V_GS
E_AS
I_AR
E_AR
dv/dt
Gate-to-Source Voltage
d Single Pulse Avalanche Energy (Thermally Limited)
Ù Avalanche Current
™ Repetitive Avalanche Energy
e Peak Diode Recovery
T_J
Operating Junction and
T_STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Symbol
R_JC
R_JA
Parameter
j Junction-to-Case
i Junction-to-Ambient (PCB Mounted, steady-state)
Max.
106
75
550
200
1.3
± 20
430
82
See Fig. 12a, 12b, 15, 16
5.5
-55 to + 175
300
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Typ.
–––
–––
Max.
0.75
40
Units
°C/W
HEXFET^® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
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11/29/11