AT45DB642D_14 Datasheet, PDF (50/57 Pages) List of Unclassifed Manufacturers – 64-megabit 2.7V Dual-interface DataFlash

Figure 26-2. Algorithm for Randomly Modifying Data
START
provide address of
page to modify
MAIN MEMORY PAGE
TO BUFFER TRANSFER
(53H, 55H)
If planning to modify multiple
bytes currently stored within
a page of the Flash array
MAIN MEMORY PAGE PROGRAM
THROUGH BUFFER
(82H, 85H)
BUFFER WRITE
(84H, 87H)
BUFFER TO MAIN
MEMORY PAGE PROGRAM
(83H, 86H)
(2)
AUTO PAGE REWRITE
(58H, 59H)
INCREMENT PAGE
(2)
ADDRESS POINTER
END
Notes:
1. To preserve data integrity, each page of an DataFlash sector must be updated/rewritten at least once within every 10,000
cumulative page erase and program operations.
2. A Page Address Pointer must be maintained to indicate which page is to be rewritten. The Auto Page Rewrite command
must use the address specified by the Page Address Pointer.
3. Other algorithms can be used to rewrite portions of the Flash array. Low-power applications may choose to wait until 10,000
cumulative page erase and program operations have accumulated before rewriting all pages of the sector. See application
note AN-4 (“Using Adesto Serial DataFlash”) for more details.
50 AT45DB642D
3542N–DFLASH–2/2014