AT45DB642D_14 Datasheet, PDF (12/57 Pages) List of Unclassifed Manufacturers – 64-megabit 2.7V Dual-interface DataFlash

The WP pin can be asserted while the device is erasing, but protection will not be activated until
the internal erase cycle completes.
Table 7-3. Chip Erase Command
Command
Chip Erase
Byte 1
C7H
Byte 2
94H
Byte 3
80H
Byte 4
9AH
Figure 7-1. Chip Erase
CS
SI
Opcode
Byte 1
Each transition
represents 8 bits
Opcode
Byte 2
Opcode
Byte 3
Opcode
Byte 4
Note: 1. Refer to the errata regarding Chip Erase on page 56
7.8 Main Memory Page Program Through Buffer
This operation is a combination of the Buffer Write and Buffer to Main Memory Page Program
with Built-in Erase operations. Data is first clocked into buffer 1 or buffer 2 from the input pins (SI
or I/O7-I/O0) and then programmed into a specified page in the main memory. To perform the
main memory page program through buffer for the standard DataFlash page size (1056-bytes),
a 1-byte opcode, 82H for buffer 1 or 85H for buffer 2, must first be clocked into the device, fol-
lowed by three address bytes. The address bytes are comprised of 13 page address bits,
(PA12-PA0) that select the page in the main memory where data is to be written, and 11 buffer
address bits (BFA10-BFA0) that select the first byte in the buffer to be written. To perform a
main memory page program through buffer for the binary page size (1024-bytes), the opcode
82H for buffer 1 or 85H for buffer 2, must be clocked into the device followed by three address
bytes consisting of 13 page address bits (A22 - A10) that specify the page in the main memory
to be written, and 10 buffer address bits (BFA9 - BFA0) that selects the first byte in the buffer to
be written. After all address bytes are clocked in, the part will take data from the input pins and
store it in the specified data buffer. If the end of the buffer is reached, the device will wrap
around back to the beginning of the buffer. When there is a low-to-high transition on the CS pin,
the part will first erase the selected page in main memory to all 1s and then program the data
stored in the buffer into that memory page. Both the erase and the programming of the page are
internally self-timed and should take place in a maximum time of t_EP. During this time, the status
register and the RDY/BUSY pin will indicate that the part is busy.
8. Sector Protection
Two protection methods, hardware and software controlled, are provided for protection against
inadvertent or erroneous program and erase cycles. The software controlled method relies on
the use of software commands to enable and disable sector protection while the hardware con-
trolled method employs the use of the Write Protect (WP) pin. The selection of which sectors
that are to be protected or unprotected against program and erase operations is specified in the
nonvolatile Sector Protection Register. The status of whether or not sector protection has been
enabled or disabled by either the software or the hardware controlled methods can be deter-
mined by checking the Status Register.
12 AT45DB642D
3542N–DFLASH–2/2014