NPT1007 Datasheet, PDF (5/7 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 200W RF Power Transistor

NPT1007
Nitronex Quadrature Combined Test Fixture
V_DS=28V, I_DQ=1400mA, T_A=25°C unless otherwise noted.
Figure 9 - Typical IMD3 Performance,
Frequency = 900MHz, Tone spacing = 1MHz
Figure 10 - Typical CW Performance
over Temperature, Frequency = 900MHz
Typical Device Characteristics
V_DS=28V, I_DQ=700mA, One Single-Ended Transistor, T_A=25°C unless otherwise noted.
Figure 11 - Quiescient Gate Voltage (V_GSQ)
Required to Reach I_DQ over Temperature
Figure 12 - MTTF of NRF1 devices as a
function of junction temperature
NPT1007
Page 5
NDS-012 Rev. 3, April 2013