NPT1007 Datasheet, PDF (2/7 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 200W RF Power Transistor

NPT1007
DC Specifications: Per Transistor, T_A = 25°C
Symbol Parameter
Off Characteristics
V_BDS
I_DLK
Drain-Source Breakdown Voltage
(V_GS = -8V, I_D = 36mA)
Drain-Source Leakage Current
(V_GS = -8V, V_DS = 60V)
On Characteristics
V_T
V_GSQ
R_ON
I_D,MAX
Gate Threshold Voltage
(V_DS = 28V, I_D = 36mA)
Gate Quiescent Voltage
(V_DS = 28V, I_D = 700mA)
On Resistance
(V_GS = 2V, I_D = 270mA)
Drain Current
(V_DS = 7V pulsed, 300ms pulse width,
0.2% duty cycle)
Min
Typ
Max
Units
100
-
-
9
-
V
18
mA
-2.3
-1.8
-1.3
V
-2.0
-1.5
-1.0
V
-
0.13
0.14
W
19.0
20.5
-
A
Absolute Maximum Ratings: Not Simultaneous, Per Transistor, T_A = 25°C Unless Otherwise Noted
Symbol Parameter
Max
Units
V_DS
V_GS
I_G
P_T
q_JC
T_STG
T_J
HBM
MM
CDM
Drain-Source Voltage
Gate-Source Voltage
Gate Current
Total Device Power Dissipation (Derated above 25°C), both transistors on
Thermal Resistance (Junction-to-Case),
composite for both transistors on, T_J = 180°C
Thermal Resistance (Junction-to-Case),
one transistor on, one off, T_J = 180°C
Storage Temperature Range
Operating Junction Temperature
Human Body Model ESD Rating (per JESD22-A114)
Machine Model ESD Rating (per JESD22-A115)
Charge Device Model ESD Rating (per JESD22-C101)
100
V
-10 to 3
V
180
mA
175
W
1.0
°C/W
1.8
-65 to 150
°C
200
°C
1C (>1000V)
A (>100V)
IV (>4000V)
NPT1007
Page 2
NDS-012 Rev. 3, April 2013