NPT1007 Datasheet, PDF (3/7 Pages) M/A-COM Technology Solutions, Inc. – Gallium Nitride 28V, 200W RF Power Transistor

NPT1007
Load-Pull Data, Reference Plane at Device Leads
V_DS=28V, I_DQ=700mA, One Single-Ended Transistor, T_A=25°C Unless Otherwise Noted
Table 1: Optimum Source and Load Impedances for CW Gain, Drain Efficiency, and Output Power Performance
Frequency
(MHz)
500
Z_S (W)
1.4 + j0.1
Z_L (W)
2.0 + j0.5
P_SAT
(dBm)
50.0
G_SS (dB)
24.0
Drain Efficiency
@ P_SAT (%)
70%
900
1.6 - j1.5
2.3 - j1.5
50.0
18.5
74%
1200
1.8 - j2.7
3.5 - j2.8
49.5
16.5
62%
73%
49.5dBm
Figure 1 - Optimum Impedances for
CW Performance
Figure 2 - Load-Pull Contours, 500MHz,
P_IN = 25dBm, Z_S = 1.4 + j0.1 W
67%
49.5dBm
61%
48.5dBm
Figure 3 - Load-Pull Contours, 900MHz,
P_IN = 30dBm, Z_S = 1.6 - j1.5 W
NPT1007
Page 3
Figure 4 - Load-Pull Contours, 1200MHz,
P_IN = 32dBm, Z_S = 1.8 - j2.7 W
NDS-012 Rev. 3, April 2013